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IXTT170N10P IXTQ170N10P
IXTK170N10P
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-3P (IXTQ) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V DS = 10V, I D = 0.5 ? I D25 , Note 1
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 60A
R G = 3.3 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
50
72
6000
2340
730
35
50
90
33
198
39
107
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
R thJC
0.21 ° C/W
R thCS
(TO-3P)
(TO-264)
0.25
0.15
° C/W
° C/W
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
I S V GS = 0V
Characteristic Values
Min. Typ. Max.
170
A
TO-264 AA ( IXTK) Outline
I SM
V SD
t rr
Q RM
Repetitive, Pulse Width Limited by T JM
I F = I S , V GS = 0V, Note 1
I F = 25A, -di/dt = 100A/ μ s,
V R = 50V, V GS = 0V
120
2.0
350
1.5
A
V
ns
μ C
Note 1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
Back Side
1 =
2 =
3 =
Tab
Gate
Drain
Source
= Drain
TO-268 (IXTT) Outline
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min. Max.
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
0.00 0.25
20.32 20.83
2.29 2.59
3.17 3.66
6.07 6.27
8.38 8.69
3.81 4.32
1.78 2.29
6.04 6.30
1.57 1.83
Inches
Min. Max.
.190 .202
.100 .114
.079 .083
.044 .056
.094 .106
.114 .122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800 .820
.090 .102
.125 .144
.239 .247
.330 .342
.150 .170
.070 .090
.238 .248
.062 .072
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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